Name: Rochester Electronics FQI3N80TU
Brand: Rochester Electronics
SKU: FQI3N80TU
Price: 0.59000 USD
Availability: InStock

Technical Specifications

Series	QFET®
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	690 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.13W (Ta), 107W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK (TO-262)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

Product Description

The Rochester Electronics FQI3N80TU is a MOSFET N-CH 800V 3A I2PAK. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the Rochester Electronics FQI3N80TU for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.