Name: Rochester Electronics FQNL2N50BTA
Brand: Rochester Electronics
SKU: FQNL2N50BTA
Price: 0.21000 USD
Availability: InStock

Technical Specifications

Series	QFET®
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	350mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5.3Ohm @ 175mA, 10V
Vgs(th) (Max) @ Id	3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	230 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 Long Body (Formed Leads)

Product Description

The Rochester Electronics FQNL2N50BTA is a POWER FIELD-EFFECT TRANSISTOR, 0. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Through Hole

Whether you need the Rochester Electronics FQNL2N50BTA for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.