Rochester Electronics FQP2NA90

MOSFET N-CH 900V 2.8A TO220-3

In Stock: 37,735 Genuine Part Fast Shipping
Rochester Electronics FQP2NA90
Click to enlarge

Key Specifications

Series QFET®
Package Tube
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V

Pricing

Quantity Unit Price (USD)
1+ $0.5300
Active RoHS Compliant

Quick inquiry

Genuine
Fast Ship
Support

Technical Specifications

Series QFET®
Package Tube
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.8Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 25 V
FET Feature -
Power Dissipation (Max) 107W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3

Product Description

The Rochester Electronics FQP2NA90 is a MOSFET N-CH 900V 2.8A TO220-3. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Tube
  • Mounting Type: Through Hole

Whether you need the Rochester Electronics FQP2NA90 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

Related Products

PH3120L,115-NXP - POWER FIELD-EFFECT TRANSISTOR, 1
PH3120L,115-NXP

POWER FIELD-EFFECT TRANSISTOR, 1

Rochester Electronics
BUZ73HXKSA1 - MOSFET N-CH 200V 7A TO220-3
BUZ73HXKSA1

MOSFET N-CH 200V 7A TO220-3

Rochester Electronics
SPD18P06P - MOSFET P-CH 60V 18.6A TO252-3
SPD18P06P

MOSFET P-CH 60V 18.6A TO252-3

Rochester Electronics
NTTFS4941NTAG - MOSFET N-CH 30V 8.3A/46A 8WDFN
NTTFS4941NTAG

MOSFET N-CH 30V 8.3A/46A 8WDFN

Rochester Electronics
BUZ100S - N-CHANNEL  POWER MOSFET
BUZ100S

N-CHANNEL POWER MOSFET

Rochester Electronics
FQAF90N08 - MOSFET N-CH 80V 56A TO3PF
FQAF90N08

MOSFET N-CH 80V 56A TO3PF

Rochester Electronics
FDS8433A - MOSFET P-CH 20V 5A 8SOIC
FDS8433A

MOSFET P-CH 20V 5A 8SOIC

Rochester Electronics
NVMFS6B14NT1G - POWER FIELD-EFFECT TRANSISTOR
NVMFS6B14NT1G

POWER FIELD-EFFECT TRANSISTOR

Rochester Electronics

Hot Products

SQ4425EY-T1_BE3 - MOSFET P-CHANNEL 30V 18A 8SOIC
SQ4425EY-T1_BE3

MOSFET P-CHANNEL 30V 18A 8SOIC

SI3459BDV-T1-GE3 - MOSFET P-CH 60V 2.9A 6TSOP
SI3459BDV-T1-GE...

MOSFET P-CH 60V 2.9A 6TSOP

IRFIZ14GPBF - MOSFET N-CH 60V 8A TO220-3
IRFIZ14GPBF

MOSFET N-CH 60V 8A TO220-3

SIHB065N60E-GE3 - MOSFET N-CH 600V 40A D2PAK
SIHB065N60E-GE3

MOSFET N-CH 600V 40A D2PAK

SI1401EDH-T1-BE3 - MOSFET P-CH 12V 4A/4A SC70-6
SI1401EDH-T1-BE...

MOSFET P-CH 12V 4A/4A SC70-6

SISA12ADN-T1-GE3 - MOSFET N-CH 30V 25A PPAK1212-8
SISA12ADN-T1-GE...

MOSFET N-CH 30V 25A PPAK1212-8

SQ2389ES-T1_GE3 - MOSFET P-CH 40V 4.1A SOT23-3
SQ2389ES-T1_GE3

MOSFET P-CH 40V 4.1A SOT23-3

SIHP240N60E-GE3 - MOSFET N-CH 600V 12A TO220AB
SIHP240N60E-GE3

MOSFET N-CH 600V 12A TO220AB

SIHG11N80AE-GE3 - MOSFET N-CH 800V 8A TO247AC
SIHG11N80AE-GE3

MOSFET N-CH 800V 8A TO247AC

SIR692DP-T1-RE3 - MOSFET N-CH 250V 24.2A PPAK SO-8
SIR692DP-T1-RE3

MOSFET N-CH 250V 24.2A PPAK SO-8

IPLK70R1K2P7ATMA1 - MOSFET N-CH 700V TDSON-8
IPLK70R1K2P7ATM...

MOSFET N-CH 700V TDSON-8

TP90H050WS - GANFET N-CH 900V 34A TO247-3
TP90H050WS

GANFET N-CH 900V 34A TO247-3

Top