Rochester Electronics FQP2NA90

MOSFET N-CH 900V 2.8A TO220-3

In Stock: 37,735 Genuine Part Fast Shipping
Rochester Electronics FQP2NA90
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Key Specifications

Series QFET®
Package Tube
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V

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Technical Specifications

Series QFET®
Package Tube
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.8Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 25 V
FET Feature -
Power Dissipation (Max) 107W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3

Product Description

The Rochester Electronics FQP2NA90 is a MOSFET N-CH 900V 2.8A TO220-3. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Tube
  • Mounting Type: Through Hole

Whether you need the Rochester Electronics FQP2NA90 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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