Name: Rochester Electronics HAT2165N-EL-E
Brand: Rochester Electronics
SKU: HAT2165N-EL-E
Price: 1.34000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Bulk
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	55A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	3.6mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 4.5 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	5.18 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	30W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-LFPAK-iV
Package / Case	8-PowerSOIC (0.154", 3.90mm Width)

Product Description

The Rochester Electronics HAT2165N-EL-E is a MOSFET N-CH 30V 55A 8LFPAK. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Surface Mount

Whether you need the Rochester Electronics HAT2165N-EL-E for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.