Name: Rochester Electronics HUF75631S3ST
Brand: Rochester Electronics
SKU: HUF75631S3ST
Price: 1.54000 USD
Availability: InStock

Technical Specifications

Series	*
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	40mOhm @ 33A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	79 nC @ 20 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1.22 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	120W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263AB)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Product Description

The Rochester Electronics HUF75631S3ST is a MOSFET N-CH 100V 33A D2PAK. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Surface Mount

Whether you need the Rochester Electronics HUF75631S3ST for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.