Name: Rochester Electronics IPB26CN10NGATMA1
Brand: Rochester Electronics
SKU: IPB26CN10NGATMA1
Price: 0.52000 USD
Availability: InStock

Technical Specifications

Series	OptiMOS™
Package	Bulk
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	26mOhm @ 35A, 10V
Vgs(th) (Max) @ Id	4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2.07 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	71W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263AB)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Product Description

The Rochester Electronics IPB26CN10NGATMA1 is a MOSFET N-CH 100V 35A D2PAK. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Surface Mount

Whether you need the Rochester Electronics IPB26CN10NGATMA1 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.