Name: Rochester Electronics IPB35N12S3L26ATMA1
Brand: Rochester Electronics
SKU: IPB35N12S3L26ATMA1
Price: 0.63000 USD
Availability: InStock

Technical Specifications

Series	Automotive, AEC-Q101, OptiMOS™
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	120 V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	26.3mOhm @ 35A, 10V
Vgs(th) (Max) @ Id	2.4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2700 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	71W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Product Description

The Rochester Electronics IPB35N12S3L26ATMA1 is a MOSFET N-CH 120V 35A TO263-3-2. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Surface Mount

Whether you need the Rochester Electronics IPB35N12S3L26ATMA1 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.