Name: Rochester Electronics IPB80N06S209ATMA2
Brand: Rochester Electronics
SKU: IPB80N06S209ATMA2
Price: 0.86000 USD
Availability: InStock

Technical Specifications

Series	OptiMOS™
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	8.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 125µA
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2.36 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	190W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Product Description

The Rochester Electronics IPB80N06S209ATMA2 is a MOSFET N-CH 55V 80A TO263-3-2. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Surface Mount

Whether you need the Rochester Electronics IPB80N06S209ATMA2 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.