Name: Rochester Electronics IPD50R650CEBTMA1
Brand: Rochester Electronics
SKU: IPD50R650CEBTMA1
Price: 0.40000 USD
Availability: InStock

Technical Specifications

Series	CoolMOS™ CE
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	650mOhm @ 1.8A, 13V
Vgs(th) (Max) @ Id	3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	342 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	-
Supplier Device Package	-
Package / Case	-

Product Description

The Rochester Electronics IPD50R650CEBTMA1 is a MOSFET N-CH 500V 9A. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk

Whether you need the Rochester Electronics IPD50R650CEBTMA1 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.