Rochester Electronics IPD60R750E6BTMA1

MOSFET N-CH 600V 5.7A TO252

In Stock: 22,222 Genuine Part Fast Shipping
Rochester Electronics IPD60R750E6BTMA1
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Key Specifications

Series CoolMOS™ E6
Package Bulk
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -

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Technical Specifications

Series CoolMOS™ E6
Package Bulk
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 750mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs 17.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 373 pF @ 100 V
FET Feature -
Power Dissipation (Max) 48W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

Product Description

The Rochester Electronics IPD60R750E6BTMA1 is a MOSFET N-CH 600V 5.7A TO252. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Bulk
  • Mounting Type: Surface Mount

Whether you need the Rochester Electronics IPD60R750E6BTMA1 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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