Name: Rochester Electronics IPI023NE7N3 G
Brand: Rochester Electronics
SKU: IPI023NE7N3 G
Price: 2.11000 USD
Availability: InStock

Technical Specifications

Series	OptiMOS™
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.8V @ 273µA
Gate Charge (Qg) (Max) @ Vgs	206 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	14.4 pF @ 37.5 V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO262-3
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

Product Description

The Rochester Electronics IPI023NE7N3 G is a MOSFET N-CH 75V 120A TO262-3. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the Rochester Electronics IPI023NE7N3 G for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.