Name: Rochester Electronics IPI147N12N3GAKSA1
Brand: Rochester Electronics
SKU: IPI147N12N3GAKSA1
Price: 0.71000 USD
Availability: InStock

Technical Specifications

Series	OptiMOS™
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	120 V
Current - Continuous Drain (Id) @ 25°C	56A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	14.7mOhm @ 56A, 10V
Vgs(th) (Max) @ Id	4V @ 61µA
Gate Charge (Qg) (Max) @ Vgs	49 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3.22 pF @ 60 V
FET Feature	-
Power Dissipation (Max)	107W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO262-3
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

Product Description

The Rochester Electronics IPI147N12N3GAKSA1 is a MOSFET N-CH 120V 56A TO262-3. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Through Hole

Whether you need the Rochester Electronics IPI147N12N3GAKSA1 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.