Name: Rochester Electronics IPS65R1K4C6
Brand: Rochester Electronics
SKU: IPS65R1K4C6
Price: 0.35000 USD
Availability: InStock

Technical Specifications

Series	CoolMOS™ C6
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	1.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	10.5 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	225 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	28W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO251-3
Package / Case	TO-251-3 Stub Leads, IPak

Product Description

The Rochester Electronics IPS65R1K4C6 is a MOSFET N-CH 650V 3.2A TO251-3. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Through Hole

Whether you need the Rochester Electronics IPS65R1K4C6 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.