Name: Rochester Electronics IPS65R1K5CEAKMA1
Brand: Rochester Electronics
SKU: IPS65R1K5CEAKMA1
Price: 0.20000 USD
Availability: InStock

Technical Specifications

Series	CoolMOS™ CE
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	10.5 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	225 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	28W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-251
Package / Case	TO-251-3 Stub Leads, IPak

Product Description

The Rochester Electronics IPS65R1K5CEAKMA1 is a MOSFET N-CH 650V 3.1A TO251. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the Rochester Electronics IPS65R1K5CEAKMA1 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.