Name: Rochester Electronics IRFBA90N20DPBF
Brand: Rochester Electronics
SKU: IRFBA90N20DPBF
Price: 3.41000 USD
Availability: InStock

Technical Specifications

Series	HEXFET®
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	98A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	23mOhm @ 59A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	240 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	6.08 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	650W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	SUPER-220™ (TO-273AA)
Package / Case	TO-273AA

Product Description

The Rochester Electronics IRFBA90N20DPBF is a IRFBA90N20 - SMPS HEXFET. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Through Hole

Whether you need the Rochester Electronics IRFBA90N20DPBF for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.