Name: Rochester Electronics IRFS59N10DPBF
Brand: Rochester Electronics
SKU: IRFS59N10DPBF
Price: 0.94000 USD
Availability: InStock

Technical Specifications

Series	HEXFET®
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	59A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	25mOhm @ 35.4A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	114 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2.45 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Product Description

The Rochester Electronics IRFS59N10DPBF is a MOSFET N-CH 100V 59A D2PAK. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Surface Mount

Whether you need the Rochester Electronics IRFS59N10DPBF for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.