Name: Rochester Electronics IRFSL3607PBF
Brand: Rochester Electronics
SKU: IRFSL3607PBF
Price: 0.49000 USD
Availability: InStock

Technical Specifications

Series	HEXFET®
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	9mOhm @ 46A, 10V
Vgs(th) (Max) @ Id	4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	84 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3.07 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	140W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-262
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

Product Description

The Rochester Electronics IRFSL3607PBF is a HEXFET POWER MOSFET. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Through Hole

Whether you need the Rochester Electronics IRFSL3607PBF for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.