Rochester Electronics MJD3055TF

NPN EPITAXIAL SILICON TRANSISTOR

In Stock: 35,714 Genuine Part Fast Shipping
Rochester Electronics MJD3055TF
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Key Specifications

Series -
Package Bulk
Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 10 A
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Current - Collector Cutoff (Max) 50µA

Pricing

Quantity Unit Price (USD)
1+ $0.2800
2,000+ $0.2653
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Technical Specifications

Series -
Package Bulk
Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 10 A
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Current - Collector Cutoff (Max) 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A, 4V
Power - Max 1.75 W
Frequency - Transition 2MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D-Pak

Product Description

The Rochester Electronics MJD3055TF is a NPN EPITAXIAL SILICON TRANSISTOR. This component belongs to the Transistors - Bipolar (BJT) - Single category and features Package of Bulk, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Bulk
  • Mounting Type: Surface Mount

Whether you need the Rochester Electronics MJD3055TF for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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