Name: Rochester Electronics NDD60N550U1-1G
Brand: Rochester Electronics
SKU: NDD60N550U1-1G
Price: 0.79000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	8.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	550mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	540 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	94W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	IPAK (TO-251)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA

Product Description

The Rochester Electronics NDD60N550U1-1G is a MOSFET N-CH 600V 8.2A IPAK. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the Rochester Electronics NDD60N550U1-1G for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.