Name: Rochester Electronics NDDL01N60Z-1G
Brand: Rochester Electronics
SKU: NDDL01N60Z-1G
Price: 0.17000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	15Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	4.9 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	92 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	26W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	IPAK (TO-251)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA

Product Description

The Rochester Electronics NDDL01N60Z-1G is a MOSFET N-CH 600V 800MA IPAK. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the Rochester Electronics NDDL01N60Z-1G for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.