Name: Rochester Electronics NDP6020P
Brand: Rochester Electronics
SKU: NDP6020P
Price: 1.07000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Bulk
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Rds On (Max) @ Id, Vgs	50mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1.59 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	60W (Tc)
Operating Temperature	-65°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3

Product Description

The Rochester Electronics NDP6020P is a POWER FIELD-EFFECT TRANSISTOR, 2. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Through Hole

Whether you need the Rochester Electronics NDP6020P for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.