Rochester Electronics NGTB50N65FL2WG

INSULATED GATE BIPOLAR TRANSISTO

In Stock: 18,746 Genuine Part Fast Shipping
Rochester Electronics NGTB50N65FL2WG
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Key Specifications

Series -
Package Bulk
Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 100 A
Current - Collector Pulsed (Icm) 200 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A

Pricing

Quantity Unit Price (USD)
1+ $3.4300
90+ $3.4300
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Technical Specifications

Series -
Package Bulk
Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 100 A
Current - Collector Pulsed (Icm) 200 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A
Power - Max 417 W
Switching Energy 1.5mJ (on), 460µJ (off)
Input Type Standard
Gate Charge 220 nC
Td (on/off) @ 25°C 100ns/237ns
Test Condition 400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr) 94 ns
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3

Product Description

The Rochester Electronics NGTB50N65FL2WG is a INSULATED GATE BIPOLAR TRANSISTO. This component belongs to the Transistors - IGBTs - Single category and features Package of Bulk, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Bulk
  • Mounting Type: Through Hole

Whether you need the Rochester Electronics NGTB50N65FL2WG for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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