Name: Rochester Electronics NP80N04NHE-S18-AY
Brand: Rochester Electronics
SKU: NP80N04NHE-S18-AY
Price: 1.62000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	3.3 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta), 120W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-262
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

Product Description

The Rochester Electronics NP80N04NHE-S18-AY is a MOSFET N-CH 40V 80A TO262. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the Rochester Electronics NP80N04NHE-S18-AY for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.