Name: Rochester Electronics NP80N055PDG-E1B-AY
Brand: Rochester Electronics
SKU: NP80N055PDG-E1B-AY
Price: 1.62000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Bulk
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	6.6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	135 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	6.9 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta), 115W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Product Description

The Rochester Electronics NP80N055PDG-E1B-AY is a MOSFET N-CH 55V 80A TO263. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Surface Mount

Whether you need the Rochester Electronics NP80N055PDG-E1B-AY for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.