Name: Rochester Electronics NTD4809NH-1G
Brand: Rochester Electronics
SKU: NTD4809NH-1G
Price: 0.18000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	9.6A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 11.5V
Rds On (Max) @ Id, Vgs	9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2.155 pF @ 12 V
FET Feature	-
Power Dissipation (Max)	1.3W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-PAK
Package / Case	TO-251-3 Stub Leads, IPak

Product Description

The Rochester Electronics NTD4809NH-1G is a MOSFET N-CH 30V 9.6A/58A IPAK. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the Rochester Electronics NTD4809NH-1G for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.