Name: Rochester Electronics NTD5865N-1G
Brand: Rochester Electronics
SKU: NTD5865N-1G
Price: 0.36000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1.261 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	71W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DPAK
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

Product Description

The Rochester Electronics NTD5865N-1G is a MOSFET N-CH 60V 43A DPAK. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Surface Mount

Whether you need the Rochester Electronics NTD5865N-1G for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.