Name: Rochester Electronics NTMFS4H02NFT1G
Brand: Rochester Electronics
SKU: NTMFS4H02NFT1G
Price: 2.03000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	37A (Ta), 193A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	40.9 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2.652 pF @ 12 V
FET Feature	-
Power Dissipation (Max)	3.13W (Ta), 83W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	5-DFN (5x6) (8-SOFL)
Package / Case	8-PowerTDFN

Product Description

The Rochester Electronics NTMFS4H02NFT1G is a MOSFET N-CH 25V 37A/193A 5DFN. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Surface Mount

Whether you need the Rochester Electronics NTMFS4H02NFT1G for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.