Name: Rochester Electronics NVMSD6N303R2G
Brand: Rochester Electronics
SKU: NVMSD6N303R2G
Price: 0.47000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Bulk
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	32mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	950 pF @ 24 V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOIC
Package / Case	8-SOIC (0.154", 3.90mm Width)

Product Description

The Rochester Electronics NVMSD6N303R2G is a MOSFET N-CH 30V 6A 8SOIC. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Surface Mount

Whether you need the Rochester Electronics NVMSD6N303R2G for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.