Name: Rochester Electronics PSMN3R2-30YLC,115
Brand: Rochester Electronics
SKU: PSMN3R2-30YLC,115
Price: 0.24000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	29.5 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2.081 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	92W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LFPAK56, Power-SO8
Package / Case	SC-100, SOT-669

Product Description

The Rochester Electronics PSMN3R2-30YLC,115 is a ELEMENT, NCHANNEL, SILICON, MOSF. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Surface Mount

Whether you need the Rochester Electronics PSMN3R2-30YLC,115 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.