Name: ROHM Semiconductor BSM180D12P2C101
Brand: ROHM Semiconductor
SKU: BSM180D12P2C101
Price: 439.36000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Bulk
Part Status	Active
FET Type	2 N-Channel (Half Bridge)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	204A (Tc)
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	23000pF @ 10V
Power - Max	1130W
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	-
Package / Case	Module
Supplier Device Package	Module

Product Description

The ROHM Semiconductor BSM180D12P2C101 is a MOSFET 2N-CH 1200V 180A MODULE. This component belongs to the Transistors - FETs, MOSFETs - Arrays category and features Package of Bulk. As an authorized distributor, SecureChip offers genuine ROHM Semiconductor components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk

Whether you need the ROHM Semiconductor BSM180D12P2C101 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.