SICFET N-CH 1200V 300A MODULE
| Series | - |
| Package | Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 300A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Quantity | Unit Price (USD) |
|---|---|
| 1+ | $857.1400 |
| Series | - |
| Package | Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 300A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | 5.6V @ 80mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | +22V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 10 V |
| FET Feature | Standard |
| Power Dissipation (Max) | 1360W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | - |
| Supplier Device Package | Module |
| Package / Case | Module |
The ROHM Semiconductor BSM300C12P3E301 is a SICFET N-CH 1200V 300A MODULE. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk. As an authorized distributor, SecureChip offers genuine ROHM Semiconductor components with competitive pricing and fast delivery worldwide.
Whether you need the ROHM Semiconductor BSM300C12P3E301 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.