ROHM Semiconductor BSM400D12P2G003

Name: ROHM Semiconductor BSM400D12P2G003
Brand: ROHM Semiconductor
SKU: BSM400D12P2G003
Price: 2142.86000 USD
Availability: InStock

SILICON CARBIDE POWER MODULE. B

In Stock: 783,578 Genuine Part Fast Shipping

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Key Specifications

Series	-
Package	Bulk
Part Status	Active
FET Type	2 N-Channel (Half Bridge)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	400A (Tc)
Rds On (Max) @ Id, Vgs	-

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Quantity	Unit Price (USD)
1+	$2,142.8600

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Technical Specifications

Series	-
Package	Bulk
Part Status	Active
FET Type	2 N-Channel (Half Bridge)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	400A (Tc)
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	4V @ 85mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	38000pF @ 10V
Power - Max	2450W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	-
Package / Case	Module
Supplier Device Package	Module

Product Description

The ROHM Semiconductor BSM400D12P2G003 is a SILICON CARBIDE POWER MODULE. B. This component belongs to the Transistors - FETs, MOSFETs - Arrays category and features Package of Bulk. As an authorized distributor, SecureChip offers genuine ROHM Semiconductor components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk

Whether you need the ROHM Semiconductor BSM400D12P2G003 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.