Name: ROHM Semiconductor BSM600C12P3G201
Brand: ROHM Semiconductor
SKU: BSM600C12P3G201
Price: 1200.00000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Tray
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	600A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	5.6V @ 182mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds	28000 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	2460W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	Module
Package / Case	Module

Product Description

The ROHM Semiconductor BSM600C12P3G201 is a SICFET N-CH 1200V 600A MODULE. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tray, Mounting Type of Chassis Mount. As an authorized distributor, SecureChip offers genuine ROHM Semiconductor components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tray
Mounting Type: Chassis Mount

Whether you need the ROHM Semiconductor BSM600C12P3G201 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.