Name: ROHM Semiconductor R6009ENX
Brand: ROHM Semiconductor
SKU: R6009ENX
Price: 3.24000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	535mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	430 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	40W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220FM
Package / Case	TO-220-3 Full Pack

Product Description

The ROHM Semiconductor R6009ENX is a MOSFET N-CH 600V 9A TO220FM. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine ROHM Semiconductor components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Through Hole

Whether you need the ROHM Semiconductor R6009ENX for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.