Name: ROHM Semiconductor R6030ENZ1C9
Brand: ROHM Semiconductor
SKU: R6030ENZ1C9
Price: 5.33000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	130mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	85 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2100 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	120W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3

Product Description

The ROHM Semiconductor R6030ENZ1C9 is a MOSFET N-CH 600V 30A TO247. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine ROHM Semiconductor components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the ROHM Semiconductor R6030ENZ1C9 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.