Name: ROHM Semiconductor SCT2H12NYTB
Brand: ROHM Semiconductor
SKU: SCT2H12NYTB
Price: 5.80000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1700 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	1.5Ohm @ 1.1A, 18V
Vgs(th) (Max) @ Id	4V @ 410µA
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 18 V
Vgs (Max)	+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds	184 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	44W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-268
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Product Description

The ROHM Semiconductor SCT2H12NYTB is a SICFET N-CH 1700V 4A TO268. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tape & Reel (TR)Cut Tape (CT)Digi-Reel®, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine ROHM Semiconductor components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Mounting Type: Surface Mount

Whether you need the ROHM Semiconductor SCT2H12NYTB for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.