Name: ROHM Semiconductor SCT3022ALGC11
Brand: ROHM Semiconductor
SKU: SCT3022ALGC11
Price: 46.27000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	93A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	28.6mOhm @ 36A, 18V
Vgs(th) (Max) @ Id	5.6V @ 18.2mA
Gate Charge (Qg) (Max) @ Vgs	133 nC @ 18 V
Vgs (Max)	+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds	2208 pF @ 500 V
FET Feature	-
Power Dissipation (Max)	339W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247N
Package / Case	TO-247-3

Product Description

The ROHM Semiconductor SCT3022ALGC11 is a SICFET N-CH 650V 93A TO247N. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine ROHM Semiconductor components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the ROHM Semiconductor SCT3022ALGC11 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.