Name: STMicroelectronics IRF640
Brand: STMicroelectronics
SKU: IRF640
Availability: InStock

Technical Specifications

Series	MESH OVERLAY™
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	180mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1560 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

Product Description

The STMicroelectronics IRF640 is a MOSFET N-CH 200V 18A TO220AB. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine STMicroelectronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the STMicroelectronics IRF640 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.