Name: STMicroelectronics SCT10N120
Brand: STMicroelectronics
SKU: SCT10N120
Price: 9.29000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	690mOhm @ 6A, 20V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 20 V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	290 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	HiP247™
Package / Case	TO-247-3

Product Description

The STMicroelectronics SCT10N120 is a SICFET N-CH 1200V 12A HIP247. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine STMicroelectronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the STMicroelectronics SCT10N120 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.