SICFET N-CH 1200V 20A HIP247
| Series | - |
| Package | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Quantity | Unit Price (USD) |
|---|---|
| 1+ | $13.6300 |
| 30+ | $12.1266 |
| 120+ | $10.8079 |
| 510+ | $9.7287 |
| 1,020+ | $9.0093 |
| Series | - |
| Package | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 10A, 20V |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 20 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 175W (Tc) |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | HiP247™ |
| Package / Case | TO-247-3 |
The STMicroelectronics SCT20N120 is a SICFET N-CH 1200V 20A HIP247. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine STMicroelectronics components with competitive pricing and fast delivery worldwide.
Whether you need the STMicroelectronics SCT20N120 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.