Name: STMicroelectronics SCTWA35N65G2V
Brand: STMicroelectronics
SKU: SCTWA35N65G2V
Price: 12.24000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V, 20V
Rds On (Max) @ Id, Vgs	72mOhm @ 20A, 20V
Vgs(th) (Max) @ Id	3.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	73 nC @ 20 V
Vgs (Max)	+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds	73000 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	208W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247 Long Leads
Package / Case	TO-247-3

Product Description

The STMicroelectronics SCTWA35N65G2V is a TRANS SJT N-CH 650V 45A TO247. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine STMicroelectronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the STMicroelectronics SCTWA35N65G2V for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.