Name: STMicroelectronics SCTWA90N65G2V-4
Brand: STMicroelectronics
SKU: SCTWA90N65G2V-4
Price: 29.19000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	119A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	24mOhm @ 50A, 18V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	157 nC @ 18 V
Vgs (Max)	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds	3380 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	565W (Tc)
Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	HiP247™ Long Leads
Package / Case	TO-247-3

Product Description

The STMicroelectronics SCTWA90N65G2V-4 is a TRANS SJT N-CH 650V 119A HIP247. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine STMicroelectronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the STMicroelectronics SCTWA90N65G2V-4 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.