Name: STMicroelectronics STB11NM60-1
Brand: STMicroelectronics
SKU: STB11NM60-1
Availability: InStock

Technical Specifications

Series	MDmesh™
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	160W (Tc)
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

Product Description

The STMicroelectronics STB11NM60-1 is a MOSFET N-CH 650V 11A I2PAK. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine STMicroelectronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the STMicroelectronics STB11NM60-1 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.