MOSFET N-CH 650V 11A TO220
| Series | MDmesh™ M2 |
| Package | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Quantity | Unit Price (USD) |
|---|---|
| 1+ | $2.0900 |
| 50+ | $1.6879 |
| 100+ | $1.5191 |
| 500+ | $1.1815 |
| 1,000+ | $0.9789 |
| 2,500+ | $0.9114 |
| 5,000+ | $0.8777 |
| Series | MDmesh™ M2 |
| Package | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 19.5 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 718 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
The STMicroelectronics STP16N65M2 is a MOSFET N-CH 650V 11A TO220. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine STMicroelectronics components with competitive pricing and fast delivery worldwide.
Whether you need the STMicroelectronics STP16N65M2 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.