MOSFET N-CH 650V 5.4A IPAK
| Series | SuperMESH3™ |
| Package | Tube |
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Quantity | Unit Price (USD) |
|---|---|
| 1+ | $0.9900 |
| 75+ | $0.8008 |
| 150+ | $0.7066 |
| 525+ | $0.5584 |
| 1,050+ | $0.4506 |
| 2,550+ | $0.4237 |
| 5,025+ | $0.4048 |
| Series | SuperMESH3™ |
| Package | Tube |
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 2.7A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I-PAK |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
The STMicroelectronics STU6N65K3 is a MOSFET N-CH 650V 5.4A IPAK. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine STMicroelectronics components with competitive pricing and fast delivery worldwide.
Whether you need the STMicroelectronics STU6N65K3 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.