Name: STMicroelectronics STW58N65DM2AG
Brand: STMicroelectronics
SKU: STW58N65DM2AG
Price: 10.92000 USD
Availability: InStock

Technical Specifications

Series	Automotive, AEC-Q101, MDmesh™ DM2
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	65mOhm @ 24A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	88 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	4100 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	360W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3

Product Description

The STMicroelectronics STW58N65DM2AG is a MOSFET N-CH 650V 48A TO247. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine STMicroelectronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the STMicroelectronics STW58N65DM2AG for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.