Name: TSC (Taiwan Semiconductor) TSM4ND65CI
Brand: TSC (Taiwan Semiconductor)
SKU: TSM4ND65CI
Price: 1.19000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.6Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id	3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16.8 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	596 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	41.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ITO-220
Package / Case	TO-220-3 Full Pack, Isolated Tab

Product Description

The TSC (Taiwan Semiconductor) TSM4ND65CI is a MOSFET N-CH 650V 4A ITO220. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine TSC (Taiwan Semiconductor) components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the TSC (Taiwan Semiconductor) TSM4ND65CI for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.