Name: TSC (Taiwan Semiconductor) TSM60NB099PW C1G
Brand: TSC (Taiwan Semiconductor)
SKU: TSM60NB099PW C1G
Price: 7.93000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	99mOhm @ 11.7A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	62 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2587 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	329W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3

Product Description

The TSC (Taiwan Semiconductor) TSM60NB099PW C1G is a MOSFET N-CHANNEL 600V 38A TO247. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine TSC (Taiwan Semiconductor) components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the TSC (Taiwan Semiconductor) TSM60NB099PW C1G for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.