Toshiba Electronic Devices and Storage Corporation 2SC5198-O(S1,E

TRANS NPN 140V 10A TO-3PN

In Stock: 15,988 Genuine Part Fast Shipping
Toshiba Electronic Devices and Storage Corporation 2SC5198-O(S1,E
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Key Specifications

Series -
Package Tube
Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 10 A
Voltage - Collector Emitter Breakdown (Max) 140 V
Vce Saturation (Max) @ Ib, Ic 2V @ 700mA, 7A
Current - Collector Cutoff (Max) 5µA (ICBO)

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Technical Specifications

Series -
Package Tube
Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 10 A
Voltage - Collector Emitter Breakdown (Max) 140 V
Vce Saturation (Max) @ Ib, Ic 2V @ 700mA, 7A
Current - Collector Cutoff (Max) 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 55 @ 1A, 5V
Power - Max 100 W
Frequency - Transition 30MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P(N)

Product Description

The Toshiba Electronic Devices and Storage Corporation 2SC5198-O(S1,E is a TRANS NPN 140V 10A TO-3PN. This component belongs to the Transistors - Bipolar (BJT) - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Toshiba Electronic Devices and Storage Corporation components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Tube
  • Mounting Type: Through Hole

Whether you need the Toshiba Electronic Devices and Storage Corporation 2SC5198-O(S1,E for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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