Name: Toshiba Electronic Devices and Storage Corporation 2SD2406-Y(F)
Brand: Toshiba Electronic Devices and Storage Corporation
SKU: 2SD2406-Y(F)
Availability: InStock

Technical Specifications

Series	-
Package	Tube
Part Status	Obsolete
Transistor Type	NPN
Current - Collector (Ic) (Max)	4 A
Voltage - Collector Emitter Breakdown (Max)	80 V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 300mA, 3A
Current - Collector Cutoff (Max)	30µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 500mA, 5V
Power - Max	25 W
Frequency - Transition	8MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220NIS

Product Description

The Toshiba Electronic Devices and Storage Corporation 2SD2406-Y(F) is a TRANS NPN 80V 4A TO220NIS. This component belongs to the Transistors - Bipolar (BJT) - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Toshiba Electronic Devices and Storage Corporation components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the Toshiba Electronic Devices and Storage Corporation 2SD2406-Y(F) for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.